Low temperature activation of grown-in defects limiting the lifetime of high purity n-type float-zone silicon wafers

Grown-in defects limiting the bulk lifetime of p-type float-zone silicon wafers

Measuring dopant concentrations in p-type silicon using iron-acceptor pairing monitored by band-to-band photoluminescence

This paper introduces a photoluminescence-based technique for determining the acceptor concentration in silicon wafers by measuring the formation rate of iron-acceptor pairs. This rate is monitored by bandto-band photoluminescence in low injection, the intensity of which is proportional to the carrier lifetime. The technique is demonstrated with an iron-implanted float zone silicon wafer, heavi...

Thermal deactivation of lifetime- limiting grown-in point defects in n-type Czochralski silicon wafers

Silicon Float-Zone Crystal Growth as a Tool for the Study of Defects and Impurities

Because of its ability to produce silicon crystals of exceptionally high purity and crystallographic perfection, the float-zone method lends itself to use as a tool for the controlled study of deliberately introduced defects and impurities in Si crystals and their effects on materials properties such as minority charge-carrier lifetime or photovoltaic conversion efficiency. Some examples of suc...

Stress-Induced Nitrogen and Oxygen Segregation and Complexing Investigated by High Resolution Synchrotron FTIR

Nitrogen doped Czochralski (N-CZ) and Float Zone (N-FZ) silicon were measured by high resolution synchrotron Fourier Transform IR spectroscopy (HR-FTIR). The chemical complexes were analyzed in specific regions with known extended defects, i.e., denuded or precipitated regions of annealed N-CZ Si wafers, in N-FZ Si with ring defects and on “N-Skin” region. The absorption lines were assigned to ...